DMG3407SSN データシートの表示（PDF） - Diodes Incorporated.

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DMG3407SSN

P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

20

VGS = -4.5V

16

12

VGS = -4.0V

VGS = -3.5V

10

VDS = -5.0V

8

6

DMG3407SSN

8

VGS = -3.0V

4

0

0

0.12

VGS = -2.5V

VGS = -2.0V

1

2

3

4

5

-VDS, DRAIN -SOURCE VOLTAGE(V)

Fig. 1 Typical Output Characteristics

0.10

0.08

0.06

0.04

0.02

0

0

1.7

1.5

2

4

6

8

10

-ID, DRAIN SOURCE CURRENT(A)

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.3

1.1

0.9

0.7

0.5

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (C)

Fig. 5 On-Resistance Variation with Temperature

4

2

TA = 150C

TA = 85C

TA = 125C

TA = 25C

0

TA = -55C

-VGS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

VGS= -4.5V

TA = 150C

TA = 125C

TA = 85C

TA = 25C

TA = -55C

0

0.12

2

4

6

8

10

-ID, DRAIN SOURCE CURRENT (A)

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

0.10

0.08

0.06

VGS = -4.5V

ID = -5A

0.04

0.02

VGS = -10V

ID = -10A

0

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (C)

Fig. 6 On-Resistance Variation with Temperature

DMG3407SSN

Document number: DS35135 Rev. 7 - 2

3 of 7

www.diodes.com

February 2017

© Diodes Incorporated

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