UPA1900 データシートの表示（PDF） - TY Semiconductor

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UPA1900

MOS FIELD EFFECT TRANSISTOR

TY Semiconductor 

Product specification

µPA1900

DESCRIPTION

The µPA1900 is a switching device which can be driven

directly by a 2.5 V power source.

The µPA1900 features a low on-state resistance and

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

FEATURES

• Can be driven by a 2.5 V power source

• Low on-state resistance

RDS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)

RDS(on)2 = 38 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)

RDS(on)3 = 45 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)

ORDERING INFORMATION

PART NUMBER

µPA1900TE

PACKAGE

6-pin Mini Mold (Thin Type)

PACKAGE DRAWING (Unit : mm)

0.32

+0.1

–0.05

0.16+–00..016

6

5

4

1

2

3

0 to 0.1

0.95 0.95

1.9

2.9 ±0.2

0.65

0.9 to 1.1

1, 2, 5, 6 : Drain

3

: Gate

4

: Source

EQUIVALENT CIRCUIT

Drain

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

VDSS

20

V

Gate to Source Voltage

VGSS

±12

V

Drain Current (DC)

Drain Current (pulse) Note1

ID(DC)

±5.5

A

ID(pulse)

±22

A

Total Power Dissipation

Total Power Dissipation Note2

PT1

0.2

W

PT2

2

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg –55 to +150 °C

Gate

Body

Diode

Gate

Protection

Diode

Source

Marking: TG

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 Board, t ≤ 5 sec.

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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