UPA808T データシートの表示（PDF） - NEC => Renesas Technology

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UPA808T

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD

NEC => Renesas Technology 

DATA SHEET

SILICON TRANSISTOR

µPA808T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD

FEATURES

• Low Noise

NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

• A Super Mini Mold Package Adopted

• Built-in 2 Transistors (2 × 2SC5184)

ORDERING INFORMATION

PART NUMBER

µPA808T

µPA808T-T1

QUANTITY

PACKING STYLE

Loose products

(50 PCS)

Taping products

(3 KPCS/Reel)

Embossed tape 8 mm wide. Pin 6

(Q1 Base), Pin 5 (Q2 Base), Pin 4

(Q2 Emitter) face to perforation

side of the tape.

Remark If you require an evaluation sample, please contact an

NEC Sales Representative. (Unit sample quantity is 50

pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

RATING

UNIT

VCBO

5

V

VCEO

3

V

VEBO

2

V

IC

30

mA

PT 90 in 1 element

mW

180 in 2 elementsNote

Tj

150

°C

Tstg

–65 to +150

°C

Note 110 mW must not be exceeded in 1 element.

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

PIN CONFIGURATION (Top View)

6

5

4

Q1

Q2

1

2

3

PIN CONNECTIONS

1. Collector (Q1) 4. Emitter (Q2)

2. Emitter (Q1) 5. Base (Q2)

3. Collector (Q2) 6. Base (Q1)

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No. P12154EJ2V0DS00 (2nd edition)

(Previous No. ID-3642)

Date Published November 1996 N

Printed in Japan

©©

11999954

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