74AHC3G04 データシートの表示（PDF） - Philips Electronics

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74AHC3G04

Inverter

Philips Electronics 

Philips Semiconductors

Inverter

Product specification

74AHC3G04; 74AHCT3G04

FEATURES

• Symmetrical output impedance

• High noise immunity

• ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V

– CDM EIA/JESD22-C101 exceeds 1000 V.

• Low power dissipation

• Balanced propagation delays

• SOT505-2 and SOT765-1 package

• Specified from −40 to +85 °C and −40 to +125 °C.

DESCRIPTION

The 74AHC3G04/74AHCT3G04 are high-speed Si-gate

CMOS devices.

The 74AHC3G04/74AHCT3G04 provides three inverting

buffer.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.

SYMBOL

PARAMETER

CONDITIONS

tPHL/tPLH

CI

CPD

propagation delay input A to output Y CL = 15 pF; VCC = 5 V

input capacitance

power dissipation capacitance

CL = 50 pF; f = 1 MHz;

notes 1 and 2

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total load switching outputs;

∑(CL × VCC2 × fo) = sum of outputs.

2. The condition is VI = GND to VCC.

TYPICAL

UNIT

74AHC3G04 74AHCT3G04

3.1

3.4

ns

1.5

1.5

pF

9

10

pF

FUNCTION TABLE

See note 1.

INPUT

nA

L

H

Note

1. H = HIGH voltage level;

L = LOW voltage level.

OUTPUT

nY

H

L

2003 Nov 06

2

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