TIP31C データシートの表示（PDF） - Fairchild Semiconductor
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TIP31C Datasheet PDF : 4 Pages
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TIP31 Series(TIP31/31A/31B/31C)
Medium Power Linear Switching Applications
• Complementary to TIP32/32A/32B/32C
NPN Epitaxial Silicon Transistor
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: TIP31
: TIP31A
: TIP31B
: TIP31C
Value
40
60
80
100
VCEO
Collector-Emitter Voltage : TIP31
40
: TIP31A
60
: TIP31B
80
: TIP31C
100
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
5
3
5
1
40
2
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
Test Condition
IC = 30mA, IB = 0
Min.
40
60
80
100
ICEO
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
VCE = 30V, IB = 0
VCE = 60V, IB = 0
ICES
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE
* DC Current Gain
VCE = 4V, IC = 1A
25
VCE = 4V, IC = 3A
10
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 375mA
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = 4V, IC = 3A
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA
3.0
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
V
0.3 mA
0.3 mA
200 µA
200 µA
200 µA
200 µA
1
mA
50
1.2
V
1.8
V
MHz
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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