IRF440 データシートの表示（PDF） - New Jersey Semiconductor
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IRF440 Datasheet PDF : 3 Pages
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IRF440/441/442/443
N-CHANNEL
POWER MOSFETS
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise $pecinad)
Chjnclarlitlc
Symbol Type Mln Typ Max Unit*
Test Conditions
Drain-Source Breakdown
Voltage
IRF440
IRF442
500
-
-
V Vos-OV
BVoss
IRF441
IRF443 450 -
-
V b"250|iA .
Gate Threshold Voltage
VoSfth) ALL 2.0 - 4.0 V VDS-VQS. ID=250)M
Gate-Source Leakage Forward loss ALL - - 100 nA Vos-20V
_
Gate-Source Leakage Reverse fess ALL
- -100 nA Vos=-20V
Zero Gate Voltage
Drain Current
-. - 2SO nA Vos-Max. Rating. VQS-OV
loss ALL
— — 1000 MA Vos-Max. RatingXO.8, V6s=OV, TC=125°C
On-State Drain-Source
Current (2)
IRF440
IRF441 8.0
loftxil
IRF442
IRF443 7.0
-' -
--
A
VDS^DtonlXRDSWiTM,., VOS=10V
A
Static Drain-Source On-State
Resistance (2)
RDS(OII(
IRF440
IRF441 -
IRF442
IRF443 -
0.6
1.0
0.85
1.1
Forward Transconductance (2) 8(6
_
ALL 4.0 6.5
0
Ves=10V, lo=4.0A
0
0 VDS>blgn)XRDS(on| max., lo=4.0A .
Input Capacitance
Ci« ALL - 1200 1600 PF
Output Capacitance
CQSS
c™ Reverse Transfer Capacitance
ALL — 230 360 PF Ves=OV, VDS=25V, f-1.0MHz
ALL - 65 150 PF
Turn-On Delay Time
td|on)
Rise Time .
Ir
Turn-Oft Delay Time
tdloW
Fall Time
tl
Total Gate Charge
(Gate-Source Plus Gate-Drain) Q0
Gate-Source Charge
Q8S
Gate-Drain ("Miller") Charge 0*
ALL - —
ALL — —
_
ALL -
35 ns
15 ns VDD=0.5BV[)ss, b=4.0A. Zo=4.7Q
[MOSFET switching times are essentially
90 ns Independent of operating temperature.)
ALL - — 30 ns
_
ALL
34 60 nC VBS-10V, b=10A, VDS=0.8 Max. Rating
(Gate charge Is essentially independent of
ALL — 6.0 — nC operatingtemperature.)
ALL - 28 - nC
THERMAL RESISTANCE
Junction to Case
Case-to-SInk
Junction-to- Ambient
RIWC ALL - — 1.0 K/W
Rmcs ALL - 0.1 - K/W Mounting surface flat, smooth, and greased
RlhJA ALL - - 30 K/W Free Air Operation
Notes: (1) ^.-25=0 to 150"C
(2) Pulse test: Pulse widlh<300j*s, Duty Cycles;2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
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