IRF440 データシートの表示（PDF） - New Jersey Semiconductor
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IRF440 Datasheet PDF : 3 Pages
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IRF440/441/442/443
N-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Continuous Source Current
(Body Diode) ,
Pulse Source Current
(Body Diode) (3)
Symbol Type Mln Typ
Is
IRF44.0
IRF441
-
-
IRF442
IRF443
'-
-
ISM
IRF440
IRF441
-
-
IRF442
IRF443
-
-
Max Units
8.0 A
Ta«t Conditions
7.0 A Modified MOSFET symbol
,
ir showing the integral
fii
32 A reverse P-N junction rectifier ^G"HJ s
28 A
Diode Forward Voltage (2)
VSD
IRF440
IRF441
-
IRF442
IRF443
-
-
_
2.0
1.9
V Tc=25°C. IS=8.0A, VGs=OV
V Tc=25°C, IS=7.0A, Vos=OV
Reverse Recovery Time •
trr
ALL - 1100 - ns Tj =150«C, lF=8.0A, d!F/dt=lOOA/Ms
Notes: (1) Tj-25-C to 150°C (2) Pulse test: Pulse widthSSOO/jS, Duty Cycla<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
20
40
60
60
100
Vos. DRAIN-TO-SOURCE VOLTAOZ (VOLTS)
Typical Output Characteristics
^iPuba T«1
0
2
4
6•
fl
10
Vgs, DBAIN-TO-5OURCE VOLTAGE (VOLTS)
' Typical Saturation CharactarKllcs
Vos, OATE-TO-SOURCE VOLTAGE (VOLTS)
Typical Transfer Characteristics
m
I*--' v 6
— IfU 440.1- - -
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2
flpTaw'" " 7~
t ^<
•' • r ^.
,^
*>• 10 I I I
A,
\
— IRF 442.3 — •
/
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\>
4f'.•fft*f
2
/
\
tm*
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/
1.0
as'C •
Tj-I60*<£{
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rn
6
fW-ioww
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SINOlfPUU
i1 II
DC
IRF 441 3~
01
1
ff 440 2-.
1.0 2
fi
10 20 60 100 20O 6OO
VD,, DRAIN-TO-SOURCE VOLTAOE (VOLTS)
Maximum S«la Operating Ana
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