BCP52 データシートの表示（PDF） - STMicroelectronics

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BCP52

MEDIUM POWER AMPLIFIER

STMicroelectronics 

BCP52/53

MEDIUM POWER AMPLIFIER

s SILICON EPITAXIAL PLANAR PNP

TRANSISTORS

s MINIATURE PLASTIC PACKAGE FOR

APPLICATION IN SURFACE MOUNTING

CIRCUITS

s GENERAL PURPOSE MAINLY INTENDED

FOR USE IN MEDIUM POWER INDUSTRIAL

APPLICATION AND FOR AUDIO AMPLIFIER

OUTPUT STAGE

s NPN COMPLEMENTS ARE BCP55 AND

BCP56 RESPECTIVELY

ADVANCE DATA

2

3

2

1

SOT-223

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCBO

VCEO

VCER

VEBO

IC

ICM

IB

IBM

Ptot

Tstg

Tj

Collector-Base Voltage (IE = 0)

Collector-Emitter Voltage (IB = 0)

Collector-Emitter Voltage (RBE = 1KΩ)

Emitter-Base Voltage (IC = 0)

Collector Current

Collector Peak Current (tp < 5 ms)

Base Current

Base Peak Current (tp < ms)

Total Dissipation at Tc = 25 oC

Storage Temperature

Max. Operating Junction Temperature

October 1997

Value

BCP52

BCP53

-60

-100

-60

-80

-60

-100

-5

-1

-1.5

-0.1

-0.2

2

-65 to 150

150

Unit

V

V

V

V

A

A

A

A

W

oC

oC

1/4

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