MMBFJ309(2010) データシートの表示（PDF） - Fairchild Semiconductor
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MMBFJ309 Datasheet PDF : 6 Pages
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J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Features
• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
• Sourced from Process 92.
• Source & Drain are interchangeable.
J309
J310
MMBFJ309
MMBFJ310
G
December 2010
GS D
TO-92
SOT-23
S
Mark MMBFJ309 : 6U
D
MMBFJ310 : 6T
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
-25
V
IGF
Forward Gate Current
10
mA
TJ, Tstg Operating and Storage Junction Temperature Range
- 55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Max.
J309-J310 *MMBFJ309-310
625
350
5.0
2.8
127
357
556
Units
mW
mW/°C
°C/W
°C/W
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
1
www.fairchildsemi.com
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