MMBFJ309(2010) データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
MMBFJ309 Datasheet PDF : 6 Pages
| |||
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0
-25
IGSS Gate Reverse Current
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, Ta = 125°C
VGS(off) Gate-Source Cutoff Voltage
VDS = 10V, ID = 1.0nA
309 -1.0
310 -2.0
V
-1.0 nA
-1.0 μA
-4.0
V
-6.5
V
On Characteristics
IDSS Zero-Gate Voltage Drain
Current*
VDS = 10V, VGS = 0
309 12
310 24
30
mA
60
mA
VGS(f) Gate-Source Forward Voltage
Small Signal Characteristics
VDS = 0, IG = 1.0mA
1.0
V
Re(yis) Common-Source Input
VDS = 10V, ID = 10mA, f = 100MHz
Conductance
309
0.7
mmhos
310
0.5
mmhos
Re(yos) Common-Source Output
Conductance
VDS = 10V, ID = 10mA, f = 100MHz
0.25
mmhos
Gpg Common-Gate Power Gain
VDS = 10V, ID = 10mA, f = 100MHz
16
dB
Re(yfs) Common-Source Forward
VDS = 10V, ID = 10mA, f = 100MHz
12
mmhos
Transconductance
Re(yig) Common-Gate Input
Conductance
VDS = 10V, ID = 10mA, f = 100MHz
12
mmhos
gfs Common-Source Forward
Transconductance
VDS = 10V, ID = 10mA, f = 1.0kHz
309 10,000
310 8,000
20,000 μmhos
18,000 μmhos
goss Common-Source Output
Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz
150 μmhos
gfg Common-Gate Forward
Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz
309
310
13,000
12,000
μmhos
μmhos
gog Common-Gate Output
VDS = 10V, ID = 10mA, f = 1.0kHz
Conductance
309
100
μmhos
310
150
μmhos
Cdg Drain-Gate Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
Csg Source-Gate Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
NF Noise Figure
VDS = 10V, ID = 10mA, f = 450MHz
en
Equivalent Short-Circuit Input VDS = 10V, ID = 10mA, f = 100Hz
Noise Voltage
2.0 2.5
pF
4.1 5.0
pF
3.0
dB
6.0
nV/ Hz
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
2
www.fairchildsemi.com
Share Link: 