19TQ015SPBF データシートの表示（PDF） - Vishay Semiconductors

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19TQ015SPBF

Schottky Rectifier, 19 A

Vishay Semiconductors 

VS-19TQ015SPbF

Vishay High Power Products Schottky Rectifier, 19 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

See fig. 1

VFM (1)

Maximum reverse leakage current

See fig. 2

IRM (1)

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

CT

LS

dV/dt

Note

(1) Pulse width < 300 μs, duty cycle < 2 %

TEST CONDITIONS

19 A

38 A

TJ = 25 °C

19 A

38 A

TJ = 75 °C

TJ = 100 °C, VR = 12 V

TJ = 100 °C, VR = 5 V

TJ = 25 °C

TJ = 100 °C

VR = Rated VR

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.36

0.46

0.32

0.43

465

285

10.5

522

2000

8.0

10 000

UNITS

V

mA

pF

nH

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction temperature range

TJ

Maximum storage temperature range

Maximum thermal resistance,

junction to case

TStg

RthJC

DC operation

See fig. 4

Typical thermal resistance,

case to heatsink

RthCS

Mounting surface, smooth and greased

Approximate weight

Mounting torque

Marking device

minimum

maximum

Case style D2PAK

VALUES

- 55 to 125

- 55 to 150

UNITS

°C

1.50

°C/W

0.50

2

g

0.07

oz.

6 (5)

12 (10)

kgf · cm

(lbf · in)

19TQ015S

www.vishay.com

2

For technical questions, contact: diodestech@vishay.com

Document Number: 94152

Revision: 12-Mar-10

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