19TQ015STRR-M3 データシートの表示（PDF） - Vishay Semiconductors

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19TQ015STRR-M3

High Performance Schottky Rectifier, 19 A

Vishay Semiconductors 

www.vishay.com

VS-19TQ015S-M3

Vishay Semiconductors

High Performance Schottky Rectifier, 19 A

2

1

3

D2PAK (TO-263AB)

Base

cathode

2

1

N/C

3

Anode

PRIMARY CHARACTERISTICS

IF(AV)

VR

VF at IF

IRM max.

TJ max.

EAS

Package

19 A

15 V

0.36 V

522 mA at 100 °C

125 °C

6.75 mJ

D2PAK (TO-263AB)

Circuit configuration

Single

FEATURES

• 125 °C TJ operation (VR < 5 V)

• Optimized for OR-ing applications

• Ultralow forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long term

reliability

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

• Designed and qualified according to JEDEC®-JESD 47

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

The VS-19TQ015S-M3 Schottky rectifier has been

optimized for ultralow forward voltage drop specifically for

the OR-ing of parallel power supplies. The proprietary

barrier technology allows for reliable operation up to 125 °C

junction temperature. Typical applications are in parallel

switching power supplies, converters, reverse battery

protection, and redundant power subsystems.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

IF(AV)

VRRM

IFSM

VF

TJ

Rectangular waveform

tp = 5 μs sine

19 Apk, TJ = 75 °C

Range

VALUES

19

15

700

0.32

-55 to +125

UNITS

A

V

A

V

°C

VOLTAGE RATINGS

PARAMETER

Maximum DC reverse voltage

Maximum working peak reverse voltage

SYMBOL

VR

VRWM

VS-19TQ015S-M3

15

UNITS

V

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Maximum average forward current

See fig. 5

SYMBOL

TEST CONDITIONS

IF(AV)

50 % duty cycle at TC = 80 °C, rectangular waveform

Maximum peak one cycle

non-repetitive surge current

See fig. 7

5 μs sine or 3 μs rect. pulse

Following any rated

IFSM

load condition and with

10 ms sine or 6 ms rect. pulse rated VRRM applied

Non-repetitive avalanche energy

Repetitive avalanche current

EAS

TJ = 25 °C, IAS = 1.50 A, L = 6 mH

IAR

Current decaying linearly to zero in 1 μs

Frequency limited by TJ maximum VA = 3 x VR typical

VALUES

19

700

330

6.75

1.50

UNITS

A

A

mJ

A

Revision: 27-Oct-17

1

Document Number: 95730

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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