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19TQ015STRR-M3 データシートの表示(PDF) - Vishay Semiconductors

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19TQ015STRR-M3
Vishay
Vishay Semiconductors Vishay
19TQ015STRR-M3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
www.vishay.com
VS-19TQ015S-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
19 A
38 A
TJ = 25 °C
19 A
38 A
TJ = 75 °C
TJ = 100 °C, VR = 12 V
TJ = 100 °C, VR = 5 V
TJ = 25 °C
TJ = 100 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.36
0.46
0.32
0.43
465
285
10.5
522
2000
8.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
TJ
TStg
RthJC
RthCS
DC operation
See fig. 4
Mounting surface, smooth, and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D2PAK (TO-263AB)
VALUES
-55 to +125
-55 to +150
UNITS
°C
1.50
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
19TQ015S
1000
100
TJ = 100 °C
10
TJ = 75 °C
TJ = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
10
1
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.1
0
5
10
15
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 27-Oct-17
2
Document Number: 95730
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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