IRF6621TR1PBF データシートの表示（PDF） - International Rectifier

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IRF6621TR1PBF

DirectFET Power MOSFET

International Rectifier 

IRF6621PbF

1000

100

10

TOP

BOTTOM

VGS

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

1

0.1

0.1

2.5V

1

≤60µs PULSE WIDTH

Tj = 25°C

10

100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

1000

100

TJ = 150°C

TJ = 25°C

10 TJ = -40°C

1000

100

TOP

BOTTOM

VGS

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

10

1

0.1

2.5V

1

≤60µs PULSE WIDTH

Tj = 150°C

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Output Characteristics

1.5

ID = 12A

VGS = 4.5V

VGS = 10V

1.0

1

VDS = 15V

≤60µs PULSE WIDTH

0.1

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

VGS, Gate-to-Source Voltage (V)

Fig 6. Typical Transfer Characteristics

10000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

1000

Coss

Crss

100

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance vs. Drain-to-Source Voltage

4

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 7. Normalized On-Resistance vs. Temperature

20

TJ = 25°C

16

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 10V

12

8

4

0

20

40

60

80

100

ID, Drain Current (A)

Fig 9. Typical On-Resistance Vs.

Drain Current and Gate Voltage

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