IRF6633ATRPBF データシートの表示（PDF） - International Rectifier

部品番号

コンポーネント説明

メーカー

IRF6633ATRPBF

DirectFET Power MOSFET

International Rectifier 

IRF6633APbF

+

‚

-



RG

D.U.T

+

ƒ

-

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-„ +

• di/dt controlled by RG

• Driver same type as D.U.T.

VDD

+

• ISD controlled by Duty Factor "D"

-

• D.U.T. - Device Under Test

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

* VGS=10V

D.U.T. ISD Waveform

Reverse

Recovery

Body Diode Forward

Current

Current

di/dt

D.U.T. VDS Waveform

Diode Recovery

dv/dt

VDD

Re-Applied

Voltage

Body Diode

Inductoorr CCuurrernetnt

Forward Drop

Ripple ≤ 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

DirectFET™ Substrate and PCB Layout, MU Outline

(Medium Size Can, U-Designation).

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations

D

S

G

S

D

G = GATE

D = DRAIN

S = SOURCE

D

D

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

www.irf.com

7

Share Link: