HYB3165405AJ-40 データシートの表示（PDF） - Infineon Technologies

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HYB3165405AJ-40

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)

Infineon Technologies 

HYB3164(5)405AJ/AT(L)-40/-50/-60

16M x 4-DRAM

This HYB3164(5)405A is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is

fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process

technology. The circuit and process design allow this device to achieve high performance and low

power dissipation. The HYB3164(5)405A operates with a single 3.3 +/-0.3V power supply and

interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB

3164(5)405A to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These

packages provide high system bit densities and are compatible with commonly used automatic

testing and insertion equipment.The HYB3164(5)405ATL parts have a very low power „sleep mode“

supported by Self Refresh.

Ordering Information

Type

8k-refresh versions:

HYB 3164405AJ-40

HYB 3164405AJ-50

HYB 3164405AJ-60

HYB 3164405AT-40

HYB 3164405AT-50

HYB 3164405AT-60

HYB 3164405ATL-50

HYB 3164405ATL-60

4k-refresh versions:

HYB 3165405AJ-40

HYB 3165405AJ-50

HYB 3165405AJ-60

HYB 3165405AT-40

HYB 3165405AT-50

HYB 3165405AT-60

HYB 3165405ATL-50

HYB 3165405ATL-60

Ordering

Code

Package

P-SOJ-32-1

P-SOJ-32-1

P-SOJ-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-SOJ-32-1

P-SOJ-32-1

P-SOJ-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

Descriptions

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

DRAM (access time 40 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 40 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

DRAM (access time 40 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 40 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

Semiconductor Group

2

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