EL5129IRE-T13 データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

メーカー

EL5129IRE-T13

Multi-Channel Buffers

Renesas Electronics 

EL5129, EL5329

Electrical Specifications VS+ = +15V, VS- = 0, RL = 10k, CL = 10pF to 0V, TA = 25°C unless otherwise specified (Continued)

PARAMETER

DESCRIPTION

CONDITIONS

MIN TYP MAX UNIT

OUTPUT CHARACTERISTICS (VCOM BUFFER)

VOH

High Level Saturated Output Voltage

VOL

Low Level Saturated Output Voltage

ISC

Short Circuit Current

POWER SUPPLY PERFORMANCE

VS+ = 15V, IO = -5mA, VI = 15V

VS+ = 15V, IO = -5mA, VI = 0V

14.85 14.9

V

0.1

0.15

V

150

170

mA

PSRR

IS

Power Supply Rejection Ratio

Total Supply Current

Reference buffer VS from 5V to 15V

VCOM buffer, VS from 5V to 15V

EL5129

EL5329

50

80

dB

55

80

dB

3.5

4.5

mA

5.5

7

mA

DYNAMIC PERFORMANCE (BUFFER AMPLIFIERS)

SR

Slew Rate (Note 2)

5

9

V/µs

tS

Settling to +0.1% (AV = +1)

BW

-3dB Bandwidth

CS

Channel Separation

(AV = +1), VO = 2V step

RL = 10k, CL = 10pF

f = 5MHz

500

ns

10

MHz

75

dB

EL5129 & EL5329 DYNAMIC PERFORMANCE (VCOM AMPLIFIERS)

SR

Slew Rate (Note 2)

-4V VOUT 4V, 20% to 80%

tS

Settling to +0.1% (AV = +1)

(AV = +1), VO = 2V step

BW

-3dB Bandwidth

RL = 10k, CL = 10pF

CS

Channel Separation

f = 5MHz

7

10

350

15

75

V/µs

ns

MHz

dB

NOTES:

1. Measured over operating temperature range

2. Slew rate is measured on rising and falling edges

FN7430 Rev 1.00

May 13, 2005

Page 4 of 13

Share Link: