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EL5412 データシートの表示(PDF) - Renesas Electronics

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EL5412
Renesas
Renesas Electronics Renesas
EL5412 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
EL5412
Electrical Specifications VS+ = +5V, VS- = 0V, RL = 1kto 2.5V, TA = 25°C, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITION
MIN
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 2.5V
TCVOS
Average Offset Voltage Drift (Note 1)
IB
Input Bias Current
VCM = 2.5V
RIN
Input Impedance
CIN
Input Capacitance
CMIR
Common-Mode Input Range
-0.5
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 5.5V
45
AVOL
Open-Loop Gain
0.5V VOUT 4.5V
60
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
VOH
Output Swing High
ISC
Short-circuit Current
IOUT
Output Current
POWER SUPPLY PERFORMANCE
IL = -5mA
IL = 5mA
4.85
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
60
IS
Supply Current (Per Amplifier)
No Load
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
tS
Settling to +0.1% (AV = +1)
BW
-3dB Bandwidth
1V VOUT 4V, 20% o 80%
(AV = +1), VO = 2V Step
GBWP
Gain-Bandwidth Product
PM
Phase Margin
CS
Channel Separation
f = 5MHz
dG
Differential Gain (Note 3)
dP
Differential Phase (Note 3)
NOTES:
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
RF = RG = 1kand VOUT = 1.4V
RF = RG = 1kand VOUT = 1.4V
TYP
3
7
2
1
2
66
74
80
4.92
±195
±65
80
2.5
55
120
40
22
52
110
0.30
0.66
MAX
15
60
+5.5
150
3.75
UNIT
mV
µV/°C
nA
G
pF
V
dB
dB
mV
V
mA
mA
dB
mA
V/µs
ns
MHz
MHz
°
dB
%
°
FN7394 Rev 1.00
December 22, 2004
Page 3 of 8

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