74VHCT541AMTC データシートの表示（PDF） - ON Semiconductor

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74VHCT541AMTC

Octal Buffer/Line Driver with 3-STATE Outputs

ON Semiconductor 

Noise Characteristics

Symbol

Parameter

VCC

(V)

VOLP

Quiet Output Maximum Dynamic VOL

5.0

(Note 7)

VOLV

Quiet Output Minimum Dynamic VOL

5.0

(Note 7)

VIHD

Minimum HIGH Level Dynamic Input Voltage

5.0

(Note 7)

VILD

Maximum HIGH Level Dynamic Input Voltage

5.0

(Note 7)

Note 7: Parameter guaranteed by design.

TA

Typ

1.2

25qC

Limits

1.6

1.2

1.6

2.0

0.8

Units

V

V

V

V

Conditions

CL 50 pF

CL 50 pF

CL 50 pF

CL 50 pF

AC Electrical Characteristics

Symbol

Parameter

VCC

(V)

TA 25qC

Min

Typ

Max

TA 40qC to 85qC

Units

Min

Max

Conditions

tPLH

Propagation Delay

5.0 r 0.5

5.0

6.9

1.0

8.0

ns

CL 15 pF

tPHL

Time

tPZL

3-STATE Output

5.0 r 0.5

5.5

7.9

1.0

9.0

CL 50 pF

8.3

11.3

1.0

13.0

ns RL 1 k: CL 15 pF

tPZH

Enable Time

tPLZ

3-STATE Output

5.0 r 0.5

8.8

12.3

1.0

14.0

CL 50 pF

9.4

11.9

1.0

13.5

ns RL 1 k: CL 50 pF

tPHZ

tOSLH

Disable Time

Output to Output Skew

5.0 r 0.5

1.0

1.0

ns (Note 8) CL 50 pF

tOSHL

CIN

Input Capacitance

4

10

10

pF VCC Open

COUT

Output Capacitance

9

pF VCC 5.0V

CPD

Power Dissipation Capacitance

19

Note 8: Parameter guaranteed by design. tOSLH |tPLHmax  tPLHmin|; tOSHL |tPHLmax  tPHLmin|.

pF (Note 9)

Note 9: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average

operating current can be obtained by the equation: ICC (OPR.) CPD * VCC * fIN  ICC/8 (per bit).

3

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