BF775 データシートの表示（PDF） - New Jersey Semiconductor
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BF775 Datasheet PDF : 2 Pages
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i, Una,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN RF Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BF775
DESCRIPTION
• Low Noise Figure
NF = 1.8 dB TYP @VCE = 6 V, lc = 2 mA, f = 900 MHz
• High Gain
I S2ie 1 2 = 12.5 dB TYP. @VCE= 8 V,lc = 15 mA,f = 900 MHz
APPLICATIONS
• Designed for use in TV-sat and UHF tuners.
SOT- 2 3 package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCES Collector-Emitter Voltage
20
V
VGEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
2.5
V
lc
Collector Current-Continuous
30
mA
IB
Base Current-Continuous
Collector Power Dissipation
PC
@Tc=25"C
Tj
Junction Temperature
Tstg Storage Temperature Range
4
mA
0.28
W
150
r
-65-150
°c
T I 1: Base
2: Emitter
"ET L 3: Collector
mm
DIM
MIN
MAX
A
0.37
0.51
B
1.19
1, ':0
c
2. 10
2.30
D
0. S3
I . Oo
J
1. 7S
2. 05
H
2, cc
3. 05
K
1. 10
1.30
L
0. -c
0.61
M
0. 076
0. 172
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Seini-Conductors encourages customers to verify that datasheets are current before placing orders.
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