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ISL85415FRZ データシートの表示(PDF) - Renesas Electronics

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ISL85415FRZ
Renesas
Renesas Electronics Renesas
ISL85415FRZ Datasheet PDF : 31 Pages
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ISL85415
2. Specifications
2. Specifications
2.1 Absolute Maximum Ratings
Parameter
Minimum
Maximum
Unit
VIN to GND
-0.3
+42
V
PHASE to GND (DC)
PHASE to GND
-0.3
VIN + 0.3 (DC)
V
-2
43 (20ns)
V
EN to GND
-0.3
+42
V
BOOT to PHASE
-0.3
+5.5
V
COMP, FS, PG, SYNC, SS, VCC to GND
-0.3
+5.9
V
FB to GND
-0.3
+2.95
V
ESD Rating
Value
Unit
Human Body Model (Tested per JESD22-A114)
3
kV
Charged Device Model (Tested per JESD22-C101E)
1.5
kV
Machine Model (Tested per JESD22-A115)
200
V
Latch-Up (Tested per JESD78E; Class 2, Level A)
100
mA
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely
impact product reliability and result in failures not covered by warranty.
2.2 Thermal Information
Thermal Resistance (Typical)
12 Ld DFN Package (Notes 4, 5)
θJA (°C/W)
44
θJC (°C/W)
5.5
Notes:
4. θJA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features.
See TB379.
5. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Parameter
Maximum Junction Temperature (Plastic Package)
Maximum Storage Temperature Range
Ambient Temperature Range
Operating Junction Temperature Range
Pb-Free Reflow Profile
Minimum
Maximum
Unit
+150
°C
-65
+150
°C
-40
+125
°C
-40
+125
°C
see TB493
2.3 Recommended Operation Conditions
Temperature
Supply Voltage
Parameter
Minimum
-40
3
Maximum
Unit
+125
°C
36
V
FN8373 Rev.5.01
Jun.4.20
Page 7 of 30

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