74LVC1G126(2007) データシートの表示（PDF） - NXP Semiconductors.
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74LVC1G126 Datasheet PDF : 16 Pages
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NXP Semiconductors
74LVC1G126
Bus buffer/line driver; 3-state
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 9.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ[1] Max
tpd
propagation delay A to Y; see Figure 7
[2]
VCC = 1.65 V to 1.95 V
1.0
3
8.0
VCC = 2.3 V to 2.7 V
VCC = 2.7 V
0.5
2.1
5.5
0.5
2.3
5.5
ten
enable time
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
OE to Y; see Figure 8
0.5
2.0
4.5
0.5
1.7
4.0
[3]
VCC = 1.65 V to 1.95 V
1.0
3.2
9.4
VCC = 2.3 V to 2.7 V
0.5
2.2
6.6
VCC = 2.7 V
0.5
2.4
6.6
VCC = 3.0 V to 3.6 V
0.5
2.1
5.3
tdis
disable time
VCC = 4.5 V to 5.5 V
OE to Y; see Figure 8
0.5
1.6
5.0
[4]
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
1.0
4.3
9.2
0.5
2.7
5.5
VCC = 2.7 V
0.5
3.4
5.5
VCC = 3.0 V to 3.6 V
0.5
3.0
5.5
VCC = 4.5 V to 5.5 V
0.5
2.2
4.2
CPD
power dissipation per buffer; VI = GND to VCC [5]
capacitance
output enabled
-
25
-
output disabled
-
6
-
−40 °C to +125 °C Unit
Min
Max
1.0
10.5 ns
0.5
7 ns
0.5
7 ns
0.5
6 ns
0.5
5.5 ns
1.0
12 ns
0.5
8.5 ns
0.5
8.5 ns
0.5
7 ns
0.5
6.5 ns
1.0
12 ns
0.5
7 ns
0.5
7 ns
0.5
7 ns
0.5
5.5 ns
-
- pF
-
- pF
[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL
[3] ten is the same as tPZH and tPZL
[4] tdis is the same as tPLZ and tPHZ
[5] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of outputs.
74LVC1G126_7
Product data sheet
Rev. 07 — 30 August 2007
© NXP B.V. 2007. All rights reserved.
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