BYV29-600 データシートの表示（PDF） - WeEn Semiconductors
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BYV29-600 Datasheet PDF : 11 Pages
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WeEn Semiconductors
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
Qr
recovered charge
trr
reverse recovery time
IRM
peak reverse recovery
current
VFR
forward recovery voltage
Conditions
IF = 20A; Tj = 25 °C; Fig. 2
IF = 8 A; Tj = 25 °C
IF = 8 A; Tj = 150 °C; Fig. 2
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 100 °C
IF = 2 A; VR = 30 V; dIF/dt = 20 A/μs;
Tj = 25 °C; Fig. 3
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; Fig. 3
IF = 10 A; VR = 30 V; dIF/dt = 50 A/μs;
Tj = 100 °C; Fig. 3
IF = 10 A; dIF/dt = 10 A/μs; Tj = 25 °C;
Fig. 4
BYV29-600
Rectifier diode ultrafast
Min Typ Max Unit
-
1.31 1.45 V
-
1.12 1.25 V
-
0.97 1.11 V
-
2
50
μA
-
0.1 0.35 mA
-
40
70
nC
-
50
60
ns
-
3
5.5 A
-
3.2 -
V
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 2. Forward current as a function of forward voltage
BYV29-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 March 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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