MMBT2222ATT1 データシートの表示（PDF） - Willas Electronic Corp.
部品番号
コンポーネント説明
メーカー
MMBT2222ATT1 Datasheet PDF : 3 Pages
| |||
WILLAS
FM120-M+
MMBT2222ATTTH1RU
1.0GAeSUnReFArCaE lMOPUuNTrSpCoHOsTeTKYTBrAaRnRIsERisREtCoTrIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
ON CH•ABRaAtcChTpErRoIcSeTsIsCSde(sNiogtne,2e)xcellent power dissipation offers
Package outline
DC CurbreenttteGr areinverse leakage current and thermal resistance.
(IC•=L0o.1wmprAodfcil,eVsCuErf=ac1e0 mVdocu)nted application in order to
(IC =o1p.0timmiAzdecb, oVaCrEd=sp10acVed.c)
(IC•=L1o0wmpAodwce, rVlCoEss=,1h0igVhdec)fficiency.
(IC•=H1i5g0hmcuArdrce,nVt CcEap=a1b0ilVityd,cl)ow forward voltage drop.
(IC•=H5i0g0hmsuArdgce, VcaCEpa=b1il0ityV.dc)
Colle•ctGoru−aErmdrititnegr fSoartuorvaetirovnoVltoalgtaegperotection.
(IC•=U1l5tr0amhAigdhc-,sIpBe=e1d5smwAitcdhc)ing.
(IC•=S5i0li0comnAedpci,taIBx=ia5l p0lmanAadrcc) hip, metal silicon junction.
• Lead-free parts meet environmental standards of
Base −EMmILit-tSerTSDa-t1u9ra5t0io0n/V2o2l8tage
(IC•=R1o5H0SmpAroddc,uIcBt f=or1p5amckAindgc)code suffix "G"
(IC =H5a0l0ogmeAndfrce,eIBp=ro5d0ucmt fAodrcp)acking code suffix "H"
HFE
VCE(sat)
VBE(sat)
SOD-123H
35
−
50
−
750.146(3.7)
0.130(3.3)
−
100
−
40
−
−
0.3
−
1.0
0.6
1.2
−
2.0
−
0.012(0.3) Typ.
Vdc
0.071(1.8)
0.056(1.4)
Vdc
SMALML−eSIcGNhAaLnCiHcAaRAl CdTaERtaISTICS
Curre•ntE−pGoaxiyn :−UBLa9n4d-wVi0dtrhaPteroddfulacmt e retardant
(IC•=C2a0smeA: dMco,
lVdCeEd=pl2a0s
Vdc, f = 100 MHz)
tic, SOD-123H
Outpu• t
TCearpmaicniatalnsc:ePla
ted
term
inals,
s
old
er
able
p
er
MIL-STD-
,
750
(VCB
=
10
Vdc,
IEM=e
0, f = 1.0
thod 202
MHz)
6
Input•CPaopalacritiatync: eIndicated by cathode band
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
• Mounting Position : Any
Input Impedance
(VC•EW=e1i0ghVtd:cA, pICpr=o1x0immaAteddc,0f.=0111.0gkrHamz)
fT
0.031(0.8) Typ.
Cobo
250
−
0.040(1.0)
−
0.024M(0.H6) z
0.031(0.8) Typ.
8.0
pF
CDibiomensions in i−nches and (m3i0llimeters) pF
hie
0.25
1.25
kW
Voltage FeedbMacAkXRIaMtioUM RATINGS AND ELECTRICAL CHARACTERISTICShre
Ratin(VgsCEat=2150℃Vdacm, bICie=nt1t0emmpAedrca,tuf r=e
1.0 kHz)
unless otherwise
specified.
SinSgmlealpl −haSsigenhaal lCf wurareven,t 6G0aHinz, resistive of inductive load.
hfe
For c(VapCaEc=itiv1e0 lVodacd,, IdCe=ra1te0cmuArrdecn,t fb=y 210.0%kHz)
−
4.0
X 10− 4
75
375
−
MaOrkui(ntVpgCuCEtoA=dde1m0itVtadncc,eICR=A1T0INmGASdc, f = 1.0 kHz)
SYMBOL FM120-MH FM130-MH FM140-MH FM15h0o-Me H FM160-M2H5FM180-MH2F0M01100-MHmmFMh1o1s50-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
MaNxiomisuemFRigeucruerrent Peak Reverse Voltage
VRRM
20
30
40
50NF 60 − 80 4.0 100 dB150
200 Volts
Maxim(VuCmER=M1S0VVodltca,gIeC
=
100
mAdc,
RS
=
1.0
k
ohms, f = 1.0
VRMS
kHz1)4
21
28
35
42
56
70
105
140 Volts
MSaxWimITuCmHDINCGBlCocHkAinRg AVoCltTaEgRe ISTICS
VDC
20
30
40
50
60
80
100
150
200 Volts
MaDxiemlauymTAimveerage Forward Rectified Current (VCC = 3.0IOVdc, VBE = − 0.5 Vdc,
td
1.0−
PeaRkisFeorTwiamrdeSurge
Current
8.3
ms
single
half
IC =
sine-wave
150 mAdc,
IFSM
IB1
=
15
mAdc)
supSetroimrapgoseeTdiomnerated load (JEDEC method)
(VCC = 30 Vdc, IC = 150 mAdc,
tr
−
30
ts
−
TypFicaalll TTihmeermal Resistance (Note 2)
IB1 = IRB2ΘJ=A 15 mAdc)
tf
40−
T1y.piDcaelvJiucencmtioonuCntaepdacointaFncRe4(Ngloatses1e) poxy printed circuitCbJoard using the minimum recommended footprint1. 20
O2p. ePrautilnsge TTeemstp: ePrautlusereWRaidntghe≤ 300 ms, Duty Cycle ≤ 2.0T%J .
-55 to +125
10
ns
25
225
ns
60
-55 to +150
Amps
Amps
℃/W
PF
℃
Storage Temperature Range
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmp
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11
WILLAS ELECTRONIC CORP.
Share Link: 