2SB688 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SB688

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)

·Good Linearity of hFE

·Complement to Type 2SD718

APPLICATIONS

·Audio frequency power amplifier applications

·Recommend for 45-50W audio frequency amplifier

output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-0.8

A

80

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SB688

SPTECH website：www.superic-tech.com

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