MPSA06 データシートの表示（PDF） - ON Semiconductor
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MPSA06 Datasheet PDF : 10 Pages
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Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
MPSA06 MMBTA06(3) PZTA06(4)
Unit
Total Device Dissipation
PD
Derate Above 25°C
625
350
1000
mW
5.0
2.8
8.0
mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
83.3
°C/W
200
357
125
°C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
ICEO Collector Cut-Off Current
VCE = 60 V, IB = 0
ICBO Collector Cut-Off Current
VCB = 80 V, IE = 0
On Characteristics
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
Small Signal Characteristics
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
IC = 100 mA, VCE = 1.0 V
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 2.0 V,
f = 100 MHz
Notes:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
Min. Max. Unit
80
V
4.0
V
0.1
μA
0.1
μA
100
100
0.25
V
1.2
V
100
MHz
© 1997 Fairchild Semiconductor Corporation
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0
2
www.fairchildsemi.com
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