BFS17S(2001) データシートの表示（PDF） - Infineon Technologies

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BFS17S
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFS17S

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics

Transition frequency

IC = 2 mA, VCE = 5 V, f = 200 MHz

IC = 25 mA, VCE = 5 V, f = 200 MHz

Collector-base capacitance

VCB = 5 V, f = 1 MHz

Collector-emitter capacitance

VCE = 5 V, f = 1 MHz

Input capacitance

VEB = 0.5 V, IC = 0 , f = 1 MHz

Output capacitance

VCE = 5 V, VBE = 0 , f = 1 MHz

Noise figure

fT

Ccb

Cce

Cibo

Cobs

F

1 1.4

1.3 2.5

GHz

-

-

- 0.55 0.8 pF

- 0.13 -

- 1.45 -

-

-

1.5

-

3.5

5 dB

IC = 2 mA, VCE = 5 V, f = 800 MHz,

ZS = 0

Transducer gain

IC = 20 mA, VCE = 5 V, ZS = ZL = 50 ,

f = 500 MHz

|S21e|2

- 12,7 -

Linear output voltage

IC = 14 mA, VCE = 5 V, dim = 60 dB,

f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50

V01=V02 -

100

- mV

Third order intercept point

IP3

IC = 200 mA, VCE = 8 V, ZS=ZSopt , ZL=ZLopt ,

f = 900 MHz

-

23

- dBm

3

Aug-20-2001

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