2SD1884 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD1884 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
tf
Fall Time
IC= 4A ; VCE= 5V
IC= 4A , IB1= 0.8A ; IB2= -1.6A
PW=20μs; Duty Cycle≤1%
2SD1884
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10 μA
1.0 mA
1.0 mA
8
5
10
0.3 μs
SPTECH website：www.superic-tech.com
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