P2N2222A データシートの表示（PDF） - Continental Device India Limited
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P2N2222A Datasheet PDF : 4 Pages
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ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) P2N2222, P2N2222A
DESCRIPTION
SYMBOL TEST CONDITION
2222
2222A
DC Current Gain
hFE
IC=0.1mA,VCE=10V
>35
>35
IC=1mA,VCE=10V
>50
>50
IC=10mA,VCE=10V
>75
>75
IC=10mA,VCE=10V
-
>35
Ta=55 deg C
IC=150mA,VCE=10V 100-300 100-300
IC=150mA,VCE=1V
>50
>50
IC=500mA,VCE=10V >30
>40
DYNAMIC CHARACTERISTICS
ALL f=1kHz
Small Signal Current Gain
hfe
IC=1mA, VCE=10V
-
50-300
IC=10mA, VCE=10V
-
75-375
Input Inpedence
hie
IC=1mA, VCE=10V
-
2.0-8.0
IC=10mA, VCE=10V
-
0.25-1.25
Voltage Feedback Ratio
hre
IC=1mA, VCE=10V
-
8.0 x 10-4
IC=10mA, VCE=10V
-
4.0
Out put Adimttance
hoe
IC=1mA, VCE=10V
-
5.0-35
IC=10mA, VCE=10V
25-200
Collector Base Time Constant
rb'Cc
IE=20mA, VCB=20V
-
<150
f=31.8MHz
Noise Figure
NF
IC=100uA, VCE=10V
-
<4.0
Rs=1kohms, f=1kHz
UNIT
kohms
umhos
ps
dB
DYNAMIC CHARACTERISTICS
Transistors Frequency
Out-Put Capacitance
Input Capacitance
ft
IC=20mA, VCE=20V >250
>300
f=100MHz
Cob
VCB=10V, IE=0
<8.0
<8.0
f=1MHz
Cib
VEB=0.5V, IC=0
<30
<25
f=1MHz
MHz
pF
pF
SWITCHING Time
Delay time
Rise time
td
IC=150mA,IB1=15mA
<10
ns
tr
VCC=30V,VBE=0.5V
-
<25
ns
Storage time
Fall time
ts
IC=150mA, IB1=
<225
ns
tf
IB2=15mA, VCC=30V
-
<60
ns
*Pulse Condition: Length =300us, Duty Cycle=2%
Continental Device India Limited
Data Sheet
Page 2 of 4
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