STD888G-TN3-R(2017) データシートの表示（PDF） - Unisonic Technologies
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STD888G-TN3-R
(Rev.:2017)
(Rev.:2017)
Unisonic Technologies
STD888G-TN3-R Datasheet PDF : 4 Pages
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STD888
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE=0)
VCBO
-60
V
Collector-Emitter Voltage (IB=0)
VCEO
-30
V
Emitter-Base Voltage (IC=0)
VEBO
-6
V
Collector Current
IC
-5
A
Collector Peak Current (tp<5ms)
ICM
-10
A
Total Dissipation at TC=25°C
PD
15
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Base-Emitter Saturation Voltage (Note)
VBE(sat)
DC Current Gain (Note)
hFE
Delay Time
tD
Rise Time
tR
Storage Time
tS
Fall Time
tF
Note: Pulsed: Pulse duration=300µs, duty cycle≤1.5%.
TEST CONDITIONS
IE=0, IC=-100µA
IB=0, IC=-10mA
IC=0, IE=-100µA
VCB=-30V, IE=0
IC=0, VEB=-6V
IC=-500mA, IB=-5mA
IC=-2A, IB=-50mA
IC=-5A, IB=-250mA
IC=-6A, IB=-250mA
IC=-8A, IB=-400mA
IC=-10A, IB=-500mA
IC=-2A, IB=-50mA
IC=-6A, IB=-250mA
IC=-10mA, VCE=-1V
IC=-500mA, VCE=-1V
IC=-5A, VCE=-1V
IC=-8A, VCE=-1V
IC=-10A, VCE=-1V
IC=-3A, IB1=-IB2=-60mA
VCC=-20V
MIN TYP MAX UNIT
-60
V
-30
V
-6
V
-10 nA
-10 nA
-0.15 V
-0.25 V
-0.70 V
-0.70 V
-1 V
-1.5 V
-1.1 V
-1.4 V
150 200
150 200 300
75 100
40 55
15 35
180 220 ns
160 210 ns
250 300 ns
80 100 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R209-028.B
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