STD888G-TN3-T データシートの表示（PDF） - Unisonic Technologies
部品番号
コンポーネント説明
メーカー
STD888G-TN3-T Datasheet PDF : 3 Pages
| |||
STD888
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE=0)
VCBO
-60
V
Collector-Emitter Voltage (IB=0)
VCEO
-30
V
Emitter-Base Voltage (IC=0)
VEBO
-6
V
Collector Current
IC
-5
A
Collector Peak Current (tp<5ms)
ICM
-10
A
Total Dissipation at TC=25°C
PD
15
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TCASE=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO
IE=0, IC=-100µA
BVCEO (Note 1) IB=0, IC=-10mA
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVEBO
ICBO
IC=0, IE=-100µA
VCB=-30V, IE=0
Emitter Cut-off Current
IEBO
IC=0, VEB=-6V
IC=-500mA, IB=-5mA
Collector-Emitter Saturation Voltage
VCE(sat)
(Note 1)
IC=-2A, IB=-50mA
IC=-5A, IB=-250mA
IC=-6A, IB=-250mA
IC=-8A, IB=-400mA
Base-Emitter Saturation Voltage
VBE(sat)
(Note 1)
IC=-10A, IB=-500mA
IC=-2A, IB=-50mA
IC=-6A, IB=-250mA
IC=-10mA, VCE=-1V
DC Current Gain
hFE
(Note 1)
IC=-500mA, VCE=-1V
IC=-5A, VCE=-1V
IC=-8A, VCE=-1V
IC=-10A, VCE=-1V
Delay Time
Rise Time
Storage Time
Fall Time
tD
tR
IC=-3A, IB1=-IB2=-60mA
tS
VCC=-20V
tF
Note: 1. Pulsed: Pulse duration=300µs, duty cycle≤1.5%
MIN TYP MAX UNIT
-60
V
-30
V
-6
V
-10 nA
-10 nA
-0.15 V
-0.25 V
-0.70 V
-0.70 V
-1 V
-1.5 V
-1.1 V
-1.4 V
150 200
150 200 300
75 100
40 55
15 35
180 220 ns
160 210 ns
250 300 ns
80 100 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R209-028.a
Share Link: 