STB7NK80ZT4(2002) データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
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STB7NK80ZT4
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
STB7NK80ZT4 Datasheet PDF : 13 Pages
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STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤5.2A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Value
STP7NK80Z
STB7NK80Z
STB7NK80Z-1
STP7NK80ZFP
800
800
± 30
5.2
5.2 (*)
3.3
3.3 (*)
20.8
20.8 (*)
125
30
1
0.24
4000
4.5
-
2500
-55 to 150
-55 to 150
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
D2PAK
I2PAK
1
62.5
TO-220FP
4.2
50
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
5.2
210
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
°C/W
°C/W
°C
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min. Typ. Max. Unit
30
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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