C3353 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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C3353 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 3A; IB1= -IB2= 0.6A;
VCC= 200V
2SC3353
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
3
MHz
1.0 μs
3.0 μs
1.0 μs
SPTECH website：www.superic-tech.com
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