2SA1489 データシートの表示（PDF） - New Jersey Semiconductor

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2SA1489

Silicon PNP Power Transistor

New Jersey Semiconductor 

<^£.ml-L.onau(2toi L/^i

C/

J

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Line.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA1489

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

V(BR)CEo= -80V(Min)

• Good Linearity of hFE

• Complement to Type 2SC3853

APPLICATIONS

• For audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25-C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-80

V

VCEO Collector-Emitter Voltage

-80

V

VEBO Emitter-Base Voltage

-6

V

Ic

Collector Current-Continuous

-6

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25'C

Tj

Junction Temperature

-3

A

80

W

150

•c

Tstg

Storage Temperature Range

-55-150

r

PIN: l.Base

2.Collertor

3. Emitter

TC-3PN Package

mm

DIM WIN MAX

A 19.60 20.30

B 15.50 15.70

C 4.70 4.90

D 0.90 1.10

E 1.90 2.10

F 3.40 3.60

G 2.90 3,20

H 3.20 3.40

J 0.595 0.605

K 19.80 20.70

L 1.90 2.20

N 10.89 10.91

Q 4.90 5.10

R 3.35 3.45

S 1.995 2.100

U 5.90 6.20

Y 9.90 10.10

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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