2SD904 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD904

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0, L= 35mH

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 200mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB= 0.6A

ICES

Collector Cutoff Current

VCB= 1500V; VBE= 0

IEBO

Collector Cutoff Current

VEB= 4V; IC= 0

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

hFE-2

DC Current Gain

IC= 4A; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 4A

2SD904

MIN TYP. MAX UNIT

600

V

6

V

5.0

V

1.6

V

1.0 mA

44

100 mA

8

5

10

2.0

V

SPTECH website：www.superic-tech.com

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