2SD907 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD907

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·High Collector Current

·Good Linearity of hFE

·High Reliability

·Wide Area of Safe Operation

APPLICATIONS

·Audio amplifier

·Series regulators

·General purpose power amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base voltage

7

V

IC

Collector Current-Continuous

10

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1.5

A

80

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W

SPTECH website：www.superic-tech.com

2SD907

1

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