2SD907 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD907

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 0.1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 0.1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

ICBO

Collector Cutoff Current

VCB= 80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE

DC Current Gain

IC= 2A; VCE= 5V

2SD907

MIN TYP. MAX UNIT

80

V

80

V

7

V

1.2

V

2.0

V

0.1 mA

0.1 mA

40

SPTECH website：www.superic-tech.com

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