1N60AL-B-T92-B データシートの表示（PDF） - Unisonic Technologies

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1N60AL-B-T92-B

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

Unisonic Technologies 

1N60A

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD VGS=0V, ISD = 1.2A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

tRR VGS=0V, ISD = 1.2A

Reverse Recovery Charge

QRR di/dt = 100A/μs

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

2. Essentially independent of operating temperature.

Power MOSFET

MIN TYP MAX UNIT

1.6 V

1.2 A

4.8 A

136

ns

0.3

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 8

QW-R502-091,E

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