1N60A
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS=0V, ISD = 1.2A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR VGS=0V, ISD = 1.2A
Reverse Recovery Charge
QRR di/dt = 100A/μs
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT
1.6 V
1.2 A
4.8 A
136
ns
0.3
μC
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