2SC2851 データシートの表示（PDF） - Panasonic Corporation
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2SC2851 Datasheet PDF : 3 Pages
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Transistor
2SC2851
Silicon NPN epitaxial planer type
For high-frequency power amplification
s Features
q High transition frequency fT.
q Output of 0.6W is obtained in the VHF band (f = 175MHz).
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
36
V
Collector to emitter voltage VCEO
16
V
Emitter to base voltage
VEBO
3
V
Peak collector current
ICP
0.5
A
Collector current
IC
0.3
A
Collector power dissipation PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
0.45+–00..21
1.27
1.27
123
0.45+–00..21
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
High-frequency output
Overall efficiency
Symbol
ICBO
hFE
fT
Cob
PO*
η
Conditions
VCB = 20V, IE = 0
VCE = 13.5V, IC = 100mA
VCB = 10V, IE = –100mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCC = 13.5V, Pi = 0.03W, f = 175MHz
VCC = 13.5V, Pi = 0.03W, f = 175MHz
min
typ
max Unit
10
µA
20
50
1.5
2
GHz
4
8
pF
0.6
0.9
W
60
%
*Refer to the PO measurment circuit
1
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