2SD386 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD386

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.0V(Max) @IC= 1.0A

APPLICATIONS

·Designed for TV vertical deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

10

A

1.75

W

25

150

℃

Tstg

Storage Temperature Range

-40~150

℃

SPTECH website：www.superic-tech.com

2SD386

1

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