CY20AAJ-8F データシートの表示（PDF） - Renesas Electronics

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CY20AAJ-8F

Nch IGBT for Strobe Flasher

Renesas Electronics 

CY20AAJ-8F

Electrical Characteristics

Parameter

Collector-emitter breakdown voltage

Gate-emitter breakdown voltage

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Symbol

V(BR)CES

V(BR)GES

ICES

IGES

VGE(th)

Min.

450

±8

—

—

—

Typ.

—

—

—

—

—

Max.

—

—

10

±10

1.5

Unit

V

V

µA

µA

V

(Tch = 25°C)

Test conditions

IC = 1 mA, VGE = 0 V

IG = ±100 µA, VCE = 0 V

VCE = 400 V, VGE = 0 V

VGE = ±6 V, VCE = 0 V

VCE = 10 V, IC = 1 mA

Performance Curves

Maximum Pulse Collector Current

(Conductive Capability in Strobe Flasher Applications)

160

°C

CM

µF

RG = 30Ω

120

80

40

0

0

2

4

6

8

Gate-Emitter Voltage VGE (V)

Rev.1.00, Aug.20.2004, page 2 of 4

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