BUX41 データシートの表示（PDF） - Comset Semiconductors
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BUX41 Datasheet PDF : 3 Pages
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NPN BUX41
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
VEB0
ICEO
ICEX
IEBO
hFE
VCE(SAT)
VBE(SAT)
IS/B
ES/B
fT
ton
Ratings
Test Condition(s)
Collector-Emitter Sustaining
Voltage (1)
Emitter-Base Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (1)
Collector-Emitter saturation
Voltage (1)
Base-Emitter saturation
Voltage (1)
Second breakdown collector
current
Clamped ES/B Collector
current
Transition frequency
IC=200 mA
IC=0A , IE=50 mA
VCE=160 V , IB=0A
VCE= VCEX , VBE= -1.5V
VCE= VCEX , VBE= -1.5V, Tcase = 125°C
VEB=5.0 V, IC=0
IC=5 A , VCE=4.0 V
IC=8 A , VCE=4.0 V
IC=5 A , IB=0.5 A
IC=8 A , IB=1 A
IC=8 A , IB=1 A
VCE=30 V , ts = 1s
VCE=135 V , ts = 1s
Vclamp=200 V , L=500 µH
VCE=15 V , IC=1 A , f=10 MHz
Turn-on time
IC=8 A , IB=1 A , VCC=150 V
ts
Storage time
tf
File time
IC=8 A , VCC=150 V
IB1 = -IB2 =1 A
Min Typ Mx Unit
200 - -
7- -
- -1
- -1
- -5
- -1
15 - 45
8- -
- 0.38 1.2
- 0.6 1.6
- 1.35 2
4- -
0.15 - -
8- -
8- -
V
V
mA
mA
mA
-
V
A
A
MHz
- 0.28 1.0
- 1.2 1.7 µs
- 0.25 0.8
(1) Pulse Duration = 300 µs, Duty Cycle <= 2%
COMSET SEMICONDUCTORS
2/3
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