2SD1497 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD1497

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

ICEX

Collector Cutoff Current

VCB= 1500V; VEB= 2V

tf

Fall Time

hFE-

DC Current Gain

ICP= 4A, IB1= 1.3A

IC= 5A ; VCE= 5V

2SD1497

MIN TYP. MAX UNIT

600

V

7

V

5.0

V

1.5

V

1.0 mA

2.0 μs

5

SPTECH website：www.superic-tech.com

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