2N6547 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6547 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·High Voltage,High Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for 115 and 220 volt line operated switch-mode
applications such as:
·Switching regulators
·PWM inverters and motor controls
·Solenoid and relay drivers
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV
Collector-Emitter Voltage
850
V
VCEX(SUS) Collector-Emitter Voltage
450
V
VCEO(SUS) Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9.0
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Peak
20
A
IE
Emitter Current-Continuous
25
A
IEM
Emitter Current-Peak
50
A
PC
Collector Power Dissipation@TC=25℃ 175
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
SPTECH website：www.superic-tech.com
2N6547
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