SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2.0A
IC= 10A; IB= 2.0A,TC=100℃
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 3.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 2.0A
IC= 10A; IB= 2.0A,TC=100℃
IEBO
Emitter Cutoff Current
VEB= 9.0V; IC=0
hFE-1
DC Current Gain
IC= 5.0A ; VCE= 2V
hFE-2
Is/b
fT
DC Current Gain
Second Breakdown Collector
Current with Base Forward Biased
Current Gain-Bandwidth Product
IC= 10A ; VCE= 2V
VCE= 100Vdc,t= 1.0s,Nonrepetitive
IC= 0.5A ; VCE= 10V; ftest=1.0MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
Switching times-Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= 10A , VCC= 250V,
IB1= -IB2= 2A, tp=100μs
Duty Cycle≤2.0%
2N6547
MIN MAX UNIT
400
V
1.5
2.5
V
5.0
V
1.6
1.6
V
1.0 mA
12
60
6.0 30
0.2
A
6.0 28 MHz
125 500 pF
0.05 μs
1.0 μs
4.0 μs
0.7 μs
SPTECH website:www.superic-tech.com
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