2SC937 データシートの表示（PDF） - New Jersey Semiconductor
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2SC937 Datasheet PDF : 2 Pages
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<^>Emi-t,onductoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC937
DESCRIPTION
• High Breakdown Voltage-
: VCBo= 1200V(Min)
• High Reliability
APPLICATIONS
• Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
Ic
Collector Current- Continuous
2.5
A
ICP
Collector Current-Pulse
Collector Power Dissipation
PC
@ Tc= 25 'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
6
A
22
W
125
•c
-45-125
•c
3
nt »
2
PIN
1.BASE
REMITTER
3. COLLECT OR (CASE)
TO-3 package
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1
nun
DIM MM MAX
A
39.00
B 25.30 5667
£
7.80 a. so
0
0.90 1.10
E
140 ,60
G
10,92
H
S46
K 11.40 13SO
L 16.75 1705
K
1940 1962
Q
4.00 420
V 30.00 3020
V
4,30 450
N.I Semi-Conductors reserves the right to change tost conditions, parameter limits and package dimensions without
notice. Intbrmiitioii Kirnished by N.I Semi-Conductors is believed to he holh accurate and reliahle at Hie time ofyoinu
to press. MoucNcr. N.I Semi-Condnctors assumes no responsibilit> lor ain errors or omissions discovered in its use."
N I Semi-( 'oiuluciors enc<nira»es customers to \erily that datasheets are ciinvtit hclore placing orders.
Quality Semi-Conductors
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