2SC937 データシートの表示（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SC937 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1200V(Min)
·High Reliability
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current- Continuous
2.5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC= 25℃
TJ
Junction Temperature
6
A
22
W
125
℃
Tstg
Storage Temperature Range
-45~125
℃
2SC937
SPTECH website：www.superic-tech.com
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