2SK955 データシートの表示（PDF） - Inchange Semiconductor
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2SK955 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK955
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 10mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=2.5A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2.5A;
RL=50Ω
VSD
Diode Forward Voltage
IF=5A; VGS=0
MIN TYP. MAX UNIT
800
V
2.1
3.0
4.0
V
1.5 2.0
Ω
±100 nA
500 uA
110 170
ns
420 530
ns
1.0 1.5
V
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