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1N5402G データシートの表示(PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

部品番号
コンポーネント説明
メーカー
1N5402G
YFWDIODE
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD YFWDIODE
1N5402G Datasheet PDF : 3 Pages
1 2 3
Standard Silicon Rectifiers
Reverse Voltage - 100 to 1000 V
Forward Current - 3 A
1N5401G THRU 1N5408G DO-27
FEATURES
For surface mounted applications
Glass Passivated Chip Junction
Low profile package
Ideal for automated placement
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: DO-201AD/DO-27
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.98 g / 0.0345oz
DO-201AD/ DO-27
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Symbols 1N5401G 1N5402G 1N5404G 1N5405G 1N5406G 1N5407G 1N5408G Units
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
100 200 400 500 600 800 1300 V
70
140
280
350
420
560
910
V
100 200 400 500 600 800 1300 V
Maximum Average Forward Rectified Current
at Tc = 100 °C
Peak Forward Surge Current 8.3 ms Single
Half Sine Wave Superimposed on Rated Load
IF(AV)
IFSM
Maximum Instantaneous Forward Voltage at 3.0 A
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta=125 °C
Typical Junction Capacitance1
Typical Thermal Resistance 2
VF
IR
Cj
RθJA
Operating and Storage Temperature Range
Tj, Tstg
1Measured at 1 MHz and applied reverse voltage of 4 V D.C
3.0
150.0
1.1
5.0
100
50
18
-55 ~ +150
A
A
V
μA
pF
°C/W
°C
www.yfwdiode.com
1/3
Dongguan YFW Electronics Co, Ltd.

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